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? 2002 microchip technology inc. ds21287f-page 1 MCRF355/360 features carrier frequency: 13.56 mhz data modulation frequency: 70 khz manchester coding protocol 154 bits of user memory on-board 100 ms sleep timer built-in anti-collision algorithm for reading up to multiple tags in the same rf field ?cloaking? feature to minimize the detuning effects of adjacent tags internal 100 pf resonant capacitor (mcrf360) read only device in rf field long read range rewritable with contact programmer or factory- programmed options very low power cmos design die, wafer, bumped wafer, cob, pdip or soic package options application book store and library book id airline baggage tracking toys and gaming tools access control/asset tracking applications for reading multiple tags and long read range package type rf carrier reader MCRF355/360 modulated rf data ant. a vss ant. b read range: ~ up to 1.5 meters depending on tag size and system requirements. pdip/soic v prg v dd 1 2 3 4 8 7 6 5 clk ant. a nc nc ant. b v ss 5mm 8mm thickness = 0.4 mm antenna coil connection MCRF355 cob note: pins 1, 2, 5 and 8 are for device testing and contact programming. pins 3, 5 and 6 are for external antenna connection. nc = not connected 13.56 mhz passive rfid device with anti-collision feature
MCRF355/360 ds21287f-page 2 ? 2002 microchip technology inc. description the MCRF355 and mcrf360 are microchip?s 13.56 mhz micro id ? family of rfid tagging devices. they are uniquely designed read-only passive radio frequency identification (rfid) devices with an advanced anti-collision feature. they are programma- ble with a contact programmer. the device is powered remotely by rectifying rf magnetic fields that are trans- mitted from the reader. the device has a total of six pads (see figure 1-1). three (ant. a, b, v ss ) are used to connect the external resonant circuit elements. the additional three pads (v prg , clk, v dd ) are used for programming and test- ing of the device. the device needs an external resonant circuit between antenna a, b, and v ss pads. the resonant frequency of the circuit is determined by the circuit elements between the antenna a and v ss pads. the resonant circuit must be tuned to the carrier frequency of the reader for maximum performance. the circuit element between the antenna b and v ss pads is used for data modulation. see application note an707 for further operational details. the mcrf360 includes a 100 pf internal resonant capacitor (100 pf). by utilizing this internal resonant capacitor, the device needs external coils only for the resonant circuit. examples of the resonant circuit con- figuration for both the MCRF355 and mcrf360 are shown in section 3.0. when a tag (device with the external lc resonant cir- cuit) is brought to the reader?s rf field, it induces an rf voltage across the lc resonant circuit. the device rec- tifies the rf voltage and develops a dc voltage. the device becomes functional as soon as v dd reaches the operating voltage level. the device includes a modulation transistor that is located between antenna b and v ss pads. the transis- tor has high turn-off (a few m ?) and low turn-on (3 ? ) resistance. the turn-on resistance is called modulation resistance (r m ). when the transistor turns off, the res- onant circuit is tuned to the carrier frequency of the reader. this condition is called uncloaking. when the modulation transistor turns on, its low turn-on resis- tance shorts the external circuit element between the antenna b and v ss . as a result, the resonant circuit no longer resonates at the carrier frequency. this is called cloaking. the induced voltage amplitude (on the resonant circuit) changes with the modulation data: higher amplitude during uncloaking (tuned), and lower amplitude during cloaking (detuned). this is called ?amplitude modula- tion? signal. the receiver channel in the reader detects this amplitude modulation signal and reconstructs the modulation data. the occurrence of the cloaking and uncloaking of the device is controlled by the modulation signal that turns the modulation transistor on and off, resulting in com- munication from the device to the reader. the data stream consists of 154 bits of manchester- encoded data at a 70 khz rate. the manchester code waveform is shown in figure 2-2. after completion of the data transmission, the device goes into sleep mode for about 100 ms. the device repeats the trans- mitting and sleep cycles as long as it is energized. during the sleep time the device remains in an uncloaked state. sleep time is determined by a built-in low-current timer. there is a wide variation of the sleep time between each device. this wide variation of sleep time results in a randomness of the time slot. each device wakes up and transmits its data in a different time slot with respect to each other. based on this sce- nario, the reader is able to read many tags that are in the same rf field. the device has a total of 154 bits of reprogrammable memory. all bits are reprogrammable by a contact pro- grammer. a contact programmer (part number pg103003) is available from microchip technology inc. factory programming prior to shipment, known as serialized quick turn programming sm (sqtp sm ), is also available. the device is available in die, wafer, bumped wafer, wafer-on-frame, pdip, soic and cob modules. note: information provided herein is preliminary and subject to change without notice.
? 2002 microchip technology inc. ds21287f-page 3 MCRF355/360 1.0 electrical characteristics table 1-1: absolute ratings table 1-2: dc characteristics parameters symbol min max units conditions coil current i pp _ ac ? 40 ma peak-to-peak coil current assembly temperature t asm ? 265 c < 10 sec storage temperature t store -65 150 c ? all parameters apply across the specified operating ranges, unless otherwise noted. commercial (c): t amb = -20 o c to 70 o c parameters symbol min typ max units conditions reading voltage v ddr 2.4 ? ? v v dd voltage for reading hysteresis voltage v hyst ?tbd? tbd? operating current i ddr ?710 av dd = 2.4v during reading at 25c testing voltage v ddt ?4? v? programming voltage: high level input voltage low level input voltage high voltage v ih v il v hh 0.7 * v ddt ? ? ? ? 20 ? 0.3 * v ddt ? v v v external dc voltage for programming and testing current leakage during sleep time i dd _ off ?10? na (note 1) modulation resistance r m ?3 4 ? dc resistance between drain and source gates of the modulation transistor (when it is turned on) pull-down resistor r pdw 58?k ? clk and v prg internal pull-down resistor note 1: this parameter is not tested in production.
MCRF355/360 ds21287f-page 4 ? 2002 microchip technology inc. table 1-3: ac characteristics all parameters apply across the specified operating ranges, unless otherwise noted. commercial (c): t amb = -20 o c to 70 o c parameters symbol min typ max units conditions carrier frequency f c 13.56 mhz reader?s transmitting frequency modulation frequency f m 58 70 82 khz manchester coding, at v dd = 2.6 v dc - 5 v dc coil voltage during reading v pp _ ac 4??v pp peak-to-peak ac voltage across the coil during reading coil clamp voltage v clmp _ ac ?32?v pp peak-to-peak coil clamp voltage test mode clock frequency f clk 115 500 khz 25c sleep time t off 50 100 200 ms off time for anti-collision feature, at 25c and v dd = 2.5 v dc internal resonant capacitor (mcrf360) c res 85 100 115 pf internal resonant capacitor between antenna a and v ss , at 13.56 mhz write/erase pulse width t wc ? 2 10 ms time to program bit, at 25c clock high time t high ?4.4? s 25c for testing and programming clock low time t low ?4.4? s 25c for testing and programming stop condition pulse width t pw : sto ? 1000 ? ns 25c for testing and programming stop condition setup time t su : sto ? 200 ? ns 25c for testing and programming setup time for high voltage t su : hh ? 800 ? ns 25c for testing and programming high voltage delay time t dl : hh ? 800 ? ns delay time before the next clock, at 25c for testing and programming data input setup time t su : dat ? 450 ? ns 25c for testing and programming data input hold time t hd : dat ?1.2? s 25c for testing and programming output valid from clock t aa ? 200 ? ns 25c for testing and programming data retention ? 200 ? years for t < 120c
? 2002 microchip technology inc. ds21287f-page 5 MCRF355/360 table 1-4: pad coordinates (microns) figure 1-1: die layout pad name lower l e f t x lower left y upper right x upper right y passivation openings pad center x pad center y pad width pad height ant. a -610.0 489.2 -521.0 578.2 89 89 -565.5 533.7 ant. b -605.0 -579.8 -516.0 -490.8 89 89 -560.5 -535.3 v ss -605.0 -58.2 -516.0 30.8 89 89 -560.5 -13.7 v dd 463.4 -181.4 552.4 -92.4 89 89 507.9 -136.9 clk 463.4 496.8 552.4 585.8 89 89 507.9 541.3 v prg 463.4 157.6 552.4 246.6 89 89 507.9 202.1 note 1: all coordinates are referenced from the center of the die. the minimum distance between pads (edge to edge) is 10 mil. 2: die size = 1.417 mm x 1.513 mm = 1417 m x 1513 m = 55.79 mil x 59.57 mil 1157.4 1162.4 1158 767.2 458.4 432.6 250.2 250 1417 clk v prg v dd 1513 x y (notch edge of wafer) ant a v ss ant b x x x x x x die size before saw: die size after saw: bond pad size: 1417 m x 1513 m 1353.8 m x 1450.34 m 89 m x 89 m 55.79 mil x 59.57 mil 53.3 x 57.1 mil 3.5 mil x 3.5 mil
MCRF355/360 ds21287f-page 6 ? 2002 microchip technology inc. table 1-5: pad function table table 1-6: die mechanical dimensions name function ant. a connected to external resonant circuit, (note 1) ant. b connected to external resonant circuit, (note 1) v ss connected to external resonant circuit, (note 1) device ground during test mode v dd dc voltage supply for programming and test mode clk main clock pulse for programming and test mode v prg input/output for programming and test mode note 1: see figure 3-1 for the connection with external resonant circuit. specifications min. typ. max. unit comments wafer diameter ? 8 ? inch die separation line width ? 80 ? m dice per wafer ? 12,000 ? die batch size ? 24 ? wafer bond pad opening ? ? 3.5 x 3.5 89 x 89 ? ? mil m (note 1, note 2) die backgrind thickness 7.5 190.5 8 203.2 8.5 215.9 mil m sawed 8? wafer on frame (option = wf) (note 3) 10 254 11 279.4 12 304.8 mil m bumped, sawed 8? wafer on frame (option = wfb) unsawed wafer (option = w) unsawed 8? bumped wafer (option = wb), (note 3) die passivation thickness (multilayer) ? 1.3 ? m (note 4) die size: die size x*y before saw (step size) die size x*y after saw ? ? 55.79 x 59.57 53.3 x 57.1 ? ? mil mil ? ? note 1: the bond pad size is that of the passivation opening. the metal overlaps the bond pad passivation by at least 0.1 mil. 2: metal pad composition is 98.5% aluminum with 1% si and 0.5% cu. 3: as the die thickness decreases, susceptibility to cracking increases. it is recommended that the die be as thick as the application will allow. 4: the die passivation thickness (1.3 m) can vary by device depending on the mask set used. - layer 1: oxide (undoped oxide) - layer 2: psg (doped oxide) - layer 3: oxynitride (top layer) 5: the conversion rate is 25.4 m/mil. note: extreme care is urged in the handling and assembly of die products since they are susceptible to mechanical and electrostatic damage.
? 2002 microchip technology inc. ds21287f-page 7 MCRF355/360 2.0 functional description the device contains three major sections: (1) analog front-end, (2) controller logic and (3) memory. figure 2-1 shows the block diagram of the device. 2.1 analog front-end section this section includes power supply, power-on reset, and data modulation circuits. 2.1.1 power supply the power supply circuit generates dc voltage (v dd ) by rectifying induced rf coil voltage. the power supply circuit includes high-voltage clamping diodes to pre- vent excessive voltage development across the antenna coil. 2.1.2 power-on-reset (por) this circuit generates a power-on reset when the tag first enters the reader field. the reset releases when sufficient power has developed on the v dd regulator to allow for correct operation. 2.1.3 data modulation the data modulation circuit consists of a modulation transistor and an external lc resonant circuit. the external circuit must be tuned to the carrier frequency of the reader (i.e., 13.56 mhz) for maximum perfor- mance. the modulation transistor is placed between antenna b and vss pads and has small turn-on resistance (r m ). this small turn-on resistance shorts the external circuit between the antenna b and vss pads as it turns on. the transistor turns on during the ?hi? period of the modulation data and turns off during the ?lo? period. when the transistor is turned off, the resonant circuit resonates at the carrier frequency. therefore, the external circuit develops maximum voltage across it. this condition is called uncloaking (tuned). when the transistor is turned on, its low turn-on resistance shorts the external circuit, and therefore the circuit no longer resonates at the carrier frequency. the voltage across the external circuit is minimized. this condition is called cloaking (detuned). the device transmits data by cloaking and uncloaking based on the on/off condition of the modulation transis- tor. therefore, with the 70 khz - manchester format, the data bit ?0? will be sent by cloaking (detuned) and uncloaking (tuned) the device for 7 s each. similarly, the data bit ?1? will be sent by uncloaking (tuned) and cloaking (detuned) the device for 7 s each. see figure 2-2 for the manchester waveform. figure 2-1: block diagram sleep timer modulation read/write logic test logic column drivers (high voltage circuit) address set/clear data v dd modulation clk pulse wake-up signal controller logic section (anti-collision) memory array v prg and clk 154-bit power supply column and row decoders clock generator modulation logic power-on reset por pulse controller logic section memory section analog front-end section memory section test logic read/write logic
MCRF355/360 ds21287f-page 8 ? 2002 microchip technology inc. 2.2 controller logic section 2.2.1 clock pulse generator this circuit generates a clock pulse (clk). the clock pulse is generated by an on-board time-base oscillator. the clock pulse is used for baud rate timing, data modulation rate, etc. 2.2.2 modulation logic this logic acts upon the serial data (154 bits) being read from the memory array. the data is then encoded into manchester format. the encoded data is then fed to the modulation transistor in the analog front-end section. the manchester code waveform is shown in figure 2-2. 2.2.3 sleep timer this circuit generates a sleep time (100 ms 50%) for the anti-collision feature. during this sleep time (t off ), the modulation transistor remains in a turned- on condition (cloaked) which detunes the lc resonant circuit. 2.2.4 read/write logic this logic controls the reading and programming of the memory array. figure 2-2: code waveforms data nrz-l biphase-l (manchester) signal waveform description digital data non-return to zero ? level ?1? is represented by logic high level. ?0? is represented by logic low level. biphase ? level (split phase) a level change occurs at middle of every bit clock period. ?1? is represented by a high to low level change at midclock. ?0? is represented by a low to high level change at midclock. clk internal clock signal (reference only) 1 0 11 00 0 11 01 0 note: the clk and nrz-l signals are shown for reference only. biphase-l (manchester) is the device output.
? 2002 microchip technology inc. ds21287f-page 9 MCRF355/360 3.0 resonant circuit the MCRF355 requires external coils and capacitor in order to resonate at the carrier frequency of the reader. about one-fourth of the turns of the coil should be connected between antenna b and v ss ; remaining turns should be connected between antenna a and b pads. the mcrf360 includes a 100 pf internal reso- nant capacitor. therefore, the device needs only exter- nal coils for the resonant circuit. for example, the device needs 1.377 h of inductance for the carrier fre- quency = 13.56 mhz. figures 3-1 (a) and (b) show possible configurations of the external circuits for the MCRF355. in figure 3-1 (a), two external antenna coils (l1 and l2) in series and a capacitor that is connected across the two inductors form a parallel resonant circuit to pick up incoming rf signals and also to send modulated signals to the reader. the first coil (l1) is connected between antenna a and b pads. the second coil (l2) is con- nected between antenna b and v ss pads. the capaci- tor is connected between antenna a and v ss pads. figure 3-1(b) shows the resonant circuit formed by two capacitors (c1 and c2) and one inductor. figure 3-1(c) shows a configuration of an external circuit for the mcrf360. by utilizing the 100 pf internal resonant capacitor, only l1 and l2 are needed for the external circuit. figure 3-1: configuration of external resonant circuits (a) interrogator MCRF355 ant. a ant. b v ss c l1 > l2 f 0 1 2 cl t ----------------------- - = l1 l2 rf carrier modulated where: l t =l 1 + l 2 + 2l m l m = mutual inductance between l 1 and l 2 rf data interrogator c1 c2 interrogator MCRF355 ant. a ant. b v ss f 0 1 2 l c 1 c 2 c 1 c 2 + ---------------------- ?? ?? ------------------------------------------- - = c1 c2 (b) rf carrier modulated l rf data (c) interrogator mcrf360 ant. a ant. b v ss l1 > l2 f 0 1 2 l t () 100 x 10 12 ? () ----------------------------------------------------------- = l1 l2 rf carrier modulated where: l t =l 1 + l 2 + 2l m l m = mutual inductance between l 1 and l 2 100 pf rf data
MCRF355/360 ds21287f-page 10 ? 2002 microchip technology inc. 4.0 device programming MCRF355/360 is a reprogrammable device in contact mode. the device has 154 bits of reprogrammable memory. it can be programmed in the following proce- dure. (a programmer, part number pg103003, is also available from microchip). 4.1 programming logic programming logic is enabled by applying power to the device and clocking the device via the clk pad while loading the mode code via the v prg pad (see examples 4-1 through 4-4 for test definitions). both the clk and the v prg pads have internal pull-down resistors. 4.2 pin configuration connect antenna a, b and v ss pads to ground. 4.3 pin timing 1. apply v ddt voltage to v dd . leave v ss , clk and v prg at ground. 2. load mode code into the v prg pad. the v prg is sampled at clk low to high edge. 3. the above mode function (3.2.2) will be executed when the last bit of code is entered. 4. power the device off (v dd = v ss ) to exit programming mode. 5. an alternative method to exit the programming mode is to bring clk logic ?high? before v prg to v hh (high voltage). 6. any programming mode can be entered after exiting the current function. 4.4 programming mode 4.5 signal timing examples 4-1 through 4-4 show the timing sequence for programming and reading of the device. example 4-1: programming mode 1: erase ee example 4-2: programming mode 2: program ee 1. erase ee code: 0111010100 2. program ee code: 0111010010 3. read ee code: 0111010110 note: ?0? means logic ?low? (v il ) and ?1? means logic ?high? (v ih ). v hh v il v ih t wc v prg : clk number: clk 1234567 891011 note: erases entire array to a ?1? state between clk 11 and 12. 12 v hh ? v il v ih t wc t wc leave low to leave bit at ?1? pulse high to program bit to ?0? program bit #0 ? program bit #153 clk number: clk: v prg : 1 2 5 6 7 8 9 10 11 ? 165 ? note: pulsing v prg to v hh for the bit programming time while holding the clk low programs the bit to a ?0?.
? 2002 microchip technology inc. ds21287f-page 11 MCRF355/360 example 4-3: programming mode 3: read ee example 4-4: timing data v il v ih ? bit #0 bit #153 bit #1 data data clk: vprg: ... data turn off programmer drive during clk high so MCRF355 can drive v prg . 12 56 789101112 165 clk number: clk: v prg : t pw : sto t su : sto t low t high t su : dat t wc t su : hh v hh t dl :hh t hd : dat t aa v ih ? v il v hh v ih v il v prg : (reading)
MCRF355/360 ds21287f-page 12 ? 2002 microchip technology inc. 5.0 failed die identification every die on the wafer is electrically tested according to the data sheet specifications and visually inspected to detect any mechanical damage, such as mechanical cracks and scratches. any failed die in the test or visual inspection is identified by black colored ink. therefore, any die covered with black ink should not be used. the ink dot specification: ink dot size: 254 m in circular diameter position: central third of die color: black 6.0 wafer delivery documentation the wafer is shipped with the following information: microchip technology inc. mp code lot number total number of wafers in the container total number of good dice in the container average die per wafer (dpw) scribe number of wafers with number of good dice 7.0 notice on die and wafer handling the device is very susceptible to electro-static dis- charge (esd), which can cause a critical damage to the device. special attention is needed during the handling process. any ultraviolet (uv) light can erase the memory cell contents of an unpackaged device. fluorescent lights and sunlight can also erase the memory cell, although it takes more time than uv lamps. therefore, keep any unpackaged device out of uv light and also avoid direct exposure of strong fluorescent lights and shining sunlight. certain ic manufacturing, cob and tag assembly operations may use uv light. operations such as back- grind de-tape, certain cleaning procedures, epoxy or glue cure should be done without exposing the die surface to uv light. using x-ray for die inspection will not harm the die, nor erase memory cell contents. 8.0 references it is recommended that the reader reference the following documents. 1. ?antenna circuit design for rfid applications?, an710, ds00710. 2. ?rfid tag and cob development guide with microchip?s rfid devices?, an830, ds00830. 3. ?MCRF355/360 application note: mode of operation and external resonance circuit?, an707, ds00707. 4. ?microchip development kit sample format for the MCRF355/360 devices?, tb031, ds91031. 5. ?MCRF355/360 reader reference design?, ds21311.
? 2002 microchip technology inc. ds21287f-page 13 MCRF355/360 packaging information 8.1 package marking information xxxxxxxx xxxxxnnn yyww 8-lead pdip (300 mil) example: 8-lead soic (150 mil) example: xxxxxxxx xxxxyyww nnn MCRF355 xxxxxnnn 0025 legend: xx...x customer specific information* y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code note : in the event the full microchip part number cannot be marked on one line, it will be carried over to the next line thus limiting the number of available characters for customer specific information. * standard device marking consists of microchip part number, year code, week code, and traceability code. MCRF355 xxx0025 nnn
MCRF355/360 ds21287f-page 14 ? 2002 microchip technology inc. MCRF355 cob 6 . 2 7 3 5 . 0 0 3 1 . 8 4 1 . 0 6 1. 85 9 . 6 5 r0.20(4 x) 2. 375 3 . 7 5 5 . 9 0 9 . 6 5 2 . 5 2 ? 2.00 5. 60 1. 94 4. 75 9 . 6 5 9 . 6 5 note 2 9 . 6 5 1. 42 1. 42 9. 50 4. 75 5 . 2 1 1. 58 0. 40 9. 50 4. 23 4. 90 5. 00 0 . 6 0 ( 2 x ) 0.80(2 x) r1.3 0 3. 88 8 . 0 0 1 . 5 3 ( 4 x ) 0.60(4 x) r0.16 (2 x) r0.2 0 5 . 1 0 6 . 8 8 0.30 (ref .) 1 . 5 0 0.40 (max.) note : 1. reject hole by device testing 2. top gate mark (option) 3. total package thickness excludes punching burr 9.50 x y detail x
? 2002 microchip technology inc. ds21287f-page 15 MCRF355/360 8-lead plastic dual in-line (p) ? 300 mil (pdip) b1 b a1 a l a2 p e eb c e1 n d 1 2 units inches* millimeters dimension limits min nom max min nom max number of pins n 88 pitch p .100 2.54 top to seating plane a .140 .155 .170 3.56 3.94 4.32 molded package thickness a2 .115 .130 .145 2.92 3.30 3.68 base to seating plane a1 .015 0.38 shoulder to shoulder width e .300 .313 .325 7.62 7.94 8.26 molded package width e1 .240 .250 .260 6.10 6.35 6.60 overall length d .360 .373 .385 9.14 9.46 9.78 tip to seating plane l .125 .130 .135 3.18 3.30 3.43 lead thickness c .008 .012 .015 0.20 0.29 0.38 upper lead width b1 .045 .058 .070 1.14 1.46 1.78 lower lead width b .014 .018 .022 0.36 0.46 0.56 overall row spacing eb .310 .370 .430 7.87 9.40 10.92 mold draft angle top 5 10 15 5 10 15 mold draft angle bottom 5 10 15 5 10 15 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed jedec equivalent: ms-001 drawing no. c04-018 .010? (0.254mm) per side. significant characteristic min
MCRF355/360 ds21287f-page 16 ? 2002 microchip technology inc. 8-lead plastic small outline (sn) ? narrow, 150 mil (soic) 4 12 12 .017 .009 .025 .015 .193 .154 .237 .007 .056 .061 .050 8 foot angle 0 8 04 8 15 12 0 15 0 mold draft angle bottom 15 12 0 15 0 mold draft angle top .51 .42 .33 .020 .013 b lead width .25 .23 .20 .010 .008 c lead thickness .76 .62 .48 .030 .019 l foot length .51 .38 .25 .020 .010 h chamfer distance 5.00 4.90 4.80 .197 .189 d overall length 3.99 3.91 3.71 .157 .146 e1 molded package width 6.20 6.02 5.79 .244 .228 e overall width .25 .18 .10 .010 .004 a1 standoff 1.55 1.42 1.32 .061 .052 a2 molded package thickness 1.75 1.55 1.35 .069 .053 a overall height 1.27 p pitch 8 n number of pins max nom min max nom min dimension limits millimeters inches* units 2 1 d n p b e e1 h l c 45 a2 a a1 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per side. jedec equivalent: ms-012 drawing no. c04-057 significant characteristic
? 2002 microchip technology inc. ds21287f-page 17 MCRF355/360 systems information and upgrade hot line the systems information and upgrade line provides system users a listing of the latest versions of all of microchip's development systems software products. plus, this line provides information on how customers can receive the most current upgrade kits.the hot line numbers are: 1-800-755-2345 for u.s. and most of canada, and 1-480-792-7302 for the rest of the world. on-line support microchip provides on-line support on the microchip world wide web site. the web site is used by microchip as a means to make files and information easily available to customers. to view the site, the user must have access to the internet and a web browser, such as netscape ? or microsoft ? internet explorer. files are also available for ftp download from our ftp site. connecting to the microchip internet web site the microchip web site is available at the following url: www.microchip.com the file transfer site is available by using an ftp ser- vice to connect to: ftp://ftp.microchip.com the web site and file transfer site provide a variety of services. users may download files for the latest development tools, data sheets, application notes, user's guides, articles and sample programs. a vari- ety of microchip specific business information is also available, including listings of microchip sales offices, distributors and factory representatives. other data available for consideration is: latest microchip press releases technical support section with frequently asked questions design tips device errata job postings microchip consultant program member listing links to other useful web sites related to microchip products conferences for products, development systems, technical information and more listing of seminars and events 092002
MCRF355/360 ds21287f-page 18 ? 2002 microchip technology inc. reader response it is our intention to provide you with the best documentation possible to ensure successful use of your microchip prod- uct. if you wish to provide your comments on organization, clarity, subject matter, and ways in which our documentation can better serve you, please fax your comments to the technical publications manager at (480) 792-4150. please list the following information, and use this outline to provide us with your comments about this document. 1. what are the best features of this document? 2. how does this document meet your hardware and software development needs? 3. do you find the organization of this document easy to follow? if not, why? 4. what additions to the document do you think would enhance the structure and subject? 5. what deletions from the document could be made without affecting the overall usefulness? 6. is there any incorrect or misleading information (what and where)? 7. how would you improve this document? to : technical publications manager re: reader response total pages sent ________ from: name company address city / state / zip / country telephone: (_______) _________ - _________ application (optional): would you like a reply? y n device: literature number: questions: fax: (______) _________ - _________ ds21287f MCRF355/360
? 2002 microchip technology inc. ds21287f-page 19 MCRF355/360 product identification system to order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. sales and support data sheets products supported by a preliminary data sheet may have an errata sheet describing minor operational differences and recom- mended workarounds. to determine if an errata sheet exists for a particular device, please contact one of the following: 1. your local microchip sales office 2. the microchip corporate literature center u.s. fax: (480) 792-7277 3. the microchip worldwide site (www.microchip.com) please specify which device, revision of silicon and data sheet (include literature #) you are using. new customer notification system register on our web site (www.microchip.com/cn) to receive the most current information on our products. device: MCRF355 = 13.56 mhz anti-collision device. MCRF355/6c = MCRF355 cross technology world ii cob module with dual 68 pf capacitors MCRF355/7m = MCRF355 ist i0a2 cob module with dual 68 pf capacitors MCRF355/7m: = MCRF355 cob module with dual 68 pf capacitors. mcrf360 = 13.56 mhz anti-collision device with 100 pf on-chip resonance capacitor. temperature range: = -20c to +70c package: w = wafer (11 mil backgrind) wb = bumped wafer (8 mil backgrind) wf = sawed wafer on frame (8 mil backgrind) wfb = bumped, sawed wafer on frame (8 mil backgrind) p = plastic pdip (300 mil body) 8-lead s = dice in waffle pack (8 mil) sb = bumped die in waffle pack (8 mil) sn = plastic soic (150 mil body) 8-lead part no. x /xxx package temperature range device examples: a) MCRF355/w: = 11-mil wafer. b) MCRF355/wf: = 8-mil wafer on frame. c) MCRF355/p: = pdip package. a) mcrf360/wfb:= bumped 8-mil wafer on frame b) mcrf360/sb: = bumped 8-mil die. c) mcrf360/sn: = soic package.
MCRF355/360 ds21287f-page 20 ? 2002 microchip technology inc. notes:
? 2002 microchip technology inc. ds21287f - page 21 information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. it is your responsibility to ensure that your application meets with your specifications. no representation or warranty is given and no liability is assumed by microchip technology incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. use of microchip?s products as critical com- ponents in life support systems is not authorized except with express written approval by microchip. no licenses are con- veyed, implicitly or otherwise, under any intellectual property rights. trademarks the microchip name and logo, the microchip logo, k ee l oq , mplab, pic, picmicro, picstart and pro mate are registered trademarks of microchip technology incorporated in the u.s.a. and other countries. filterlab, micro id , mxdev, mxlab, picmaster, seeval and the embedded control solutions company are registered trademarks of microchip technology incorporated in the u.s.a. dspic, dspicdem.net, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, microport, migratable memory, mpasm, mplib, mplink, mpsim, picc, picdem, picdem.net, rfpic, select mode and total endurance are trademarks of microchip technology incorporated in the u.s.a. and other countries. serialized quick turn programming (sqtp) is a service mark of microchip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2002, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. microchip received qs-9000 quality system certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona in july 1999 and mountain view, california in march 2002. the company?s quality system processes and procedures are qs-9000 compliant for its picmicro ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperipherals, non-volatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001 certified. note the following details of the code protection feature on microchip devices: microchip products meet the specification contained in their particular microchip data sheet. microchip believes that its family of products is one of the most secure families of its kind on the market today, when used i n the intended manner and under normal conditions. there are dishonest and possibly illegal methods used to breach the code protection feature. all of these methods, to our know l- edge, require using the microchip products in a manner outside the operating specifications contained in microchip's data sheets. most likely, the person doing so is engaged in theft of intellectual property. microchip is willing to work with the customer who is concerned about the integrity of their code. neither microchip nor any other semiconductor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products.
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